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5G and E-Band Communication Circuits in Deep-Scaled CMOS
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5G and E-Band Communication Circuits in Deep-Scaled CMOS
von: Marco Vigilante, Patrick Reynaert
Springer-Verlag, 2018
ISBN: 9783319726465
211 Seiten, Download: 13654 KB
 
Format:  PDF
geeignet für: Apple iPad, Android Tablet PC's Online-Lesen PC, MAC, Laptop

Typ: B (paralleler Zugriff)

 

 
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Inhaltsverzeichnis

  Preface 6  
  Contents 8  
  1 Introduction 12  
     1.1 Towards 5G and IoT 12  
     1.2 mm-Wave Spectrum, Challenges and Opportunities 13  
     1.3 System Level Requirements for mm-Wave Wireless Links 16  
        1.3.1 Free Space Loss and Beamforming 17  
        1.3.2 Impairments Model 18  
        1.3.3 Link Budget Design Examples 29  
     1.4 Outline of This Book 32  
     References 34  
  2 Gm Stage and Passives in Deep-Scaled CMOS 36  
     2.1 Gm Stage: MOS as a Transconductor 36  
        2.1.1 DC Model and Regions of Operation (IDS) 37  
        2.1.2 AC Model, Gain (gm) and Speed (ft, fMAX) 38  
        2.1.3 Inversion Coefficient (IC) as a Design Parameter 39  
        2.1.4 Effect of Scaling 39  
     2.2 Effect of Scaling on Integrated Passives 41  
        2.2.1 MOS Transistor as a Switch 41  
        2.2.2 Capacitors 42  
        2.2.3 Inductors 42  
        2.2.4 Transformers 44  
        2.2.5 Transmission Lines 45  
     2.3 Conclusion 47  
     References 47  
  3 Gain-Bandwidth Enhancement Techniques for mm-Wave Fully-Integrated Amplifiers 49  
     3.1 RLC Tank 49  
        3.1.1 RC Low-Pass Filter 49  
        3.1.2 RLC Band-Pass Filter 50  
     3.2 Coupled Resonators 51  
        3.2.1 Bode-Fano Limit 51  
        3.2.2 Capacitively Coupled Resonators 53  
        3.2.3 Inductively Coupled Resonators 54  
        3.2.4 Magnetically Coupled Resonators 55  
        3.2.5 Magnetically and Capacitively Coupled Resonators 56  
        3.2.6 Coupled Resonators Comparison 57  
     3.3 Transformer-Based Resonators 58  
        3.3.1 On the Parasitic Interwinding Capacitance 58  
        3.3.2 Effect of Unbalanced Capacitive Terminations 61  
        3.3.3 Frequency Response Equalization 62  
        3.3.4 On the Parasitic Magnetic Coupling in Multistage Amplifiers 64  
        3.3.5 Extension to Impedance Transformation 65  
        3.3.6 On the kQ Product 66  
        3.3.7 Transformer-Based Power Dividers 68  
        3.3.8 Transformer-Based Power Combiners 69  
     3.4 Conclusion 69  
     References 70  
  4 mm-Wave LC VCOs 72  
     4.1 LC VCOs Basics 73  
        4.1.1 Negative Gm Model 73  
        4.1.2 A General Result on Phase Noise 75  
        4.1.3 More on Flicker Noise Upconversion and 2nd Order Effects 77  
        4.1.4 Distributed Oscillators 80  
        4.1.5 FOM and Challenges @mm-Wave 82  
     4.2 Tuning Extension Techniques 84  
        4.2.1 Varactors 85  
        4.2.2 Switched Capacitors 85  
        4.2.3 Switched Inductors 86  
        4.2.4 Switched TLs 87  
        4.2.5 4th Order Tanks and Other Techniques 88  
     4.3 Design Example: A Dual-Band Transformer-Coupled QVCO in 28nm CMOS 88  
        4.3.1 Proposed Transformer-Coupled Quadrature VCO 89  
        4.3.2 Design Considerations at mm-Wave and Circuit Implementation 98  
        4.3.3 Measurement Results 101  
        4.3.4 Appendix 105  
     4.4 Conclusion 107  
     References 108  
  5 mm-Wave Dividers 112  
     5.1 Injection Locking: Operation Principle 113  
     5.2 High Speed Dividers 115  
        5.2.1 Injection Locked LC Dividers 115  
        5.2.2 Current-Mode Logic (CML) Dividers 117  
     5.3 Design Example: An Ultra-wideband Divide-by-4 in 28nm CMOS 120  
        5.3.1 Design for Maximum Locking Range and Minimum Power Consumption in the E-Band 121  
        5.3.2 Measurement Results 122  
     5.4 Conclusion 126  
     References 127  
  6 mm-Wave Broadband Downconverters 129  
     6.1 Receiver Architectures 129  
     6.2 Low-Noise Amplifiers Basics 131  
        6.2.1 Challenges @mm-Wave 131  
        6.2.2 Most Adopted Circuits 132  
        6.2.3 Cascode Limitations 136  
        6.2.4 Neutralized CS Amplifier 137  
        6.2.5 Broadband Input Match 138  
     6.3 Downconversion Mixers @mm-Wave 140  
     6.4 Design Example 1: A Wideband LNA in 28nm CMOS 141  
        6.4.1 LNA Architecture 141  
        6.4.2 Measurement Results 143  
     6.5 Design Example 2: A Wideband Downconverter Front-End in 28nm CMOS 147  
        6.5.1 Receiver Architecture 147  
        6.5.2 RF Mixer and Power Splitter 148  
        6.5.3 If Mixer, Baseband TIA and I/Q Generation 150  
        6.5.4 Measurement Results 150  
     6.6 Conclusion 156  
     References 157  
  7 mm-Wave Highly-Linear Broadband Power Amplifiers 160  
     7.1 Power Amplifiers Basics 161  
        7.1.1 Single Transistor Amplifier Under Large Signal 161  
        7.1.2 Trade-Offs in PA Design: Po, PAE and Linearity 161  
        7.1.3 Harmonic Terminations and Switching Amplifiers 163  
        7.1.4 Challenges @mm-Wave 166  
     7.2 Class-AB Power Amplifier @mm-Wave 167  
        7.2.1 Efficiency at Power Back-Off 168  
        7.2.2 Sources of AM-PM Distortion 170  
        7.2.3 Distortion Cancellation Techniques 173  
     7.3 Design Example: A Highly Linear Wideband PA in 28nm CMOS 180  
        7.3.1 Broadband Impedance Transformation 181  
        7.3.2 Transformer-Based Output Combiner and Inter-stage Power Divider 183  
        7.3.3 More on the kQ Product 186  
        7.3.4 Measurement Results 189  
        7.3.5 Appendix I 198  
        7.3.6 Appendix II 199  
     7.4 Conclusion 199  
     References 200  
  8 Conclusion 203  
     8.1 Summary 203  
     8.2 Major Contributions 204  
     8.3 Suggestions for Future Work 205  
     References 207  
  Index 209  


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