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Contents |
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Chapter 1: Conventional Test Methods |
6 |
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1.1 Introduction |
6 |
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1.2 The Limitations of Conventional Methods |
8 |
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1.2.1 Shortage of Extra I/O Pads for Test Purposes |
8 |
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1.2.2 Noise and Signal Distortions Through Test Interface |
10 |
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1.2.3 Limitations in Tester Technologies and Test Methods |
11 |
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1.2.4 Uncertainty in Timing Synchronization Across the Test Interface |
11 |
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1.2.5 High Cost |
11 |
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1.2.6 Other Limitations |
11 |
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References |
12 |
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Chapter 2: Testability Design |
13 |
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2.1 Introduction |
13 |
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2.2 Ad Hoc Testability Approaches |
14 |
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2.2.1 Adding Test Points |
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2.2.2 Partitioning |
14 |
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2.2.3 Other Ad Hoc Practices |
15 |
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2.3 Scan-Based Approaches |
15 |
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2.4 Pseudo-random Stimulus Generation and Test Response Compaction |
16 |
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2.4.1 Overheads |
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2.4.2 Reliability of Pseudo-random Pattern Testing |
17 |
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2.5 Limitations of In-System Testability Design |
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2.5.1 Hardware Overhead |
18 |
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2.5.2 Test Interface |
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2.5.3 Limitations in Diagnosis |
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2.5.4 Delay |
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References |
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Chapter 3: Other Techniques Based on the Contacting Probe |
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3.1 IDDQ and IDDT Testing |
20 |
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3.2 Photoconductive Sampling Probe (PC Probe) |
22 |
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3.2.1 Review of Photoconductive Pulse Generation and Sampling Theory |
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3.3 Freely Positionable PC Sampling Probe |
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References |
26 |
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Chapter 4: Contactless Testing |
28 |
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4.1 Introduction |
28 |
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4.2 Photoexcitation Probe Techniques |
30 |
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4.2.1 Optical Beam-Induced Current Technique |
30 |
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4.2.2 Light-Induced Voltage Alteration (LIVA) Method |
32 |
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4.3 Advantages and Disadvantages of Photoexcitation Probe Techniques |
32 |
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4.4 Optical Beam-Induced Resistance Change (OBIRC) Technique |
33 |
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References |
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Chapter 5: Electron Beam and Photoemission Probing |
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5.1 Electron Beam Method |
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5.2 Advantages and Disadvantages of EBT |
39 |
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5.3 The Photoemissive Probe |
40 |
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References |
43 |
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Chapter 6: Electro-Optic Sampling and Charge-Density Probe |
44 |
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6.1 Electro-Optic Sampling |
44 |
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6.1.1 External Electro-Optic Probing |
45 |
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6.1.2 Internal Electro-Optic Probing |
48 |
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6.1.3 External Vs. Internal Electro-Optic Probing |
49 |
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6.2 Charge-Density Probing |
50 |
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References |
55 |
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Chapter 7: Electric Force Microscope, Capacitive Coupling, and Scanning Magnetoresistive Probe |
56 |
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7.1 Electric Force Microscope |
56 |
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7.2 Capacitive Coupling Method |
58 |
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7.3 Scanning Magnetoresistive Probe |
59 |
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References |
60 |
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Chapter 8: Probing Techniques Based on Light Emission from Chip |
61 |
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8.1 Introduction |
61 |
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8.2 Dynamic Internal Testing of CMOS Using Hot-Carrier Luminescence |
63 |
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8.3 Testing Method Based on Light Emission from Off-State Leakage Current (LEOSCL) |
64 |
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8.4 All-Silicon Optical Contactless Testing of Integrated Circuits |
65 |
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References |
66 |
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Chapter 9: All-Silicon Optical Technology for Contactless Testing of Integrated Circuits |
67 |
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9.1 Introduction |
67 |
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9.2 Silicon LED Theory |
69 |
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9.3 Silicon LED Structure |
71 |
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9.4 Design Considerations and Feasibility |
72 |
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9.4.1 Calculating the Optical Power of the Silicon Light-Emitting Structure |
72 |
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9.4.2 The Transmitter or LED Driver Circuit |
73 |
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9.5 Experimental Design and Results |
74 |
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9.5.1 Transmission of Input Stimulus Data from Optical Test Head to Chip (DUT) |
76 |
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9.5.2 Transmission of Chip Outputs from DUT to Optical Test Head for Data Extraction |
77 |
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9.5.3 The Simultaneous Transmission of Data in Both Directions |
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9.6 Conclusion |
81 |
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References |
82 |
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Chapter 10: Comparison of Contactless Testing Methodologies |
84 |
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10.1 Introduction |
84 |
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References |
91 |
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