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Preface |
8 |
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Contents |
10 |
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Contributors |
12 |
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Part I Process and Design |
14 |
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1 Overview of the Interconnect Problem |
15 |
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1.1 Overview |
15 |
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1.2 The Interconnect Structure Design Challenge |
17 |
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1.3 Intrinsic Interconnect Parameters |
18 |
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1.3.1 Interconnect Resistance |
18 |
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1.3.2 Interconnect Capacitance |
20 |
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1.4 Impact on Interconnect Metrics |
22 |
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1.5 Impact at the Circuit Level |
25 |
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1.5.1 Physical Design of Circuit Blocks at Future Technology Generations |
27 |
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1.5.1.1 Interconnect and Standard Cell Definitions |
28 |
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1.5.1.2 Experiment Setup and Results |
31 |
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1.5.1.3 Critical Path Delay |
31 |
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1.5.1.4 Power Dissipation |
33 |
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1.5.2 Impact of Vias |
34 |
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1.6 Impact at the Full-chip Level |
36 |
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1.6.1 System Modeling Based on Wirelength Distribution |
37 |
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1.6.1.1 Resistivity Impact on the Number of Metal Levels |
39 |
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1.6.1.2 Barrier Thickness Impact on the Number of Metal Levels |
41 |
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1.6.1.3 Interconnect Variability Impact on the Number of Metal Levels |
42 |
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1.7 Reliability Challenges |
43 |
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1.7.1 Cu Electromigration |
44 |
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1.7.2 Time-Dependent Dielectric Breakdown |
44 |
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1.8 Conclusion and Outlook |
45 |
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References |
46 |
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2 Overview of Carbon Nanotube Interconnects |
49 |
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2.1 Introduction |
49 |
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2.2 Carbon Nanotubes and Graphene Nanoribbon Interconnects |
51 |
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2.2.1 CNTs Interconnects |
51 |
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2.2.2 Graphene Nanoribbon Interconnects |
52 |
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2.3 Challenges for CNT-Based and Graphene Nanoribbon Interconnects |
53 |
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2.3.1 Challenges for CNT-Based Interconnects |
53 |
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2.3.1.1 High Density Synthesis of CNTs-Based Via Interconnects |
54 |
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2.3.1.2 Low Temperature Synthesis of CNT-Based Via Interconnects |
57 |
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2.3.1.3 CNT-Based Horizontal Interconnects |
60 |
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2.3.1.4 A High Quality Contact of CNT-Metal |
62 |
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2.3.1.5 Selective Growth of Metallic CNTs |
65 |
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2.3.1.6 CNTs-Based Through-Silicon-Via for 3D Integration |
67 |
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2.3.2 The Challenges for Graphene Nanoribbon Interconnects |
69 |
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2.3.2.1 Graphene Fabrication |
69 |
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2.3.2.2 Fabrication of Graphene Nanoribbon Interconnects |
70 |
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2.3.2.3 Multi-Layer GNR Interconnects |
71 |
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2.3.2.4 Performance and Reliability of GNR Interconnects |
73 |
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2.3.2.5 GNR Interconnects in All-Graphene Circuits |
75 |
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2.4 Conclusion |
77 |
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References |
77 |
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3 Overview of Carbon Nanotube Processing Methods |
93 |
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3.1 Introduction |
93 |
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3.2 Growth of Carbon Nanotubes |
94 |
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3.3 Chemical Vapor Deposition Growth |
97 |
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3.4 Vertical Alignment of Carbon Nanotubes |
98 |
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3.5 Hidden Growth Parameter |
100 |
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3.6 Horizontal Alignment of Carbon Nanotubes |
102 |
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3.7 Carbon Nanotubes: Copper Composite Interconnects |
104 |
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3.8 Macroscopic Carbon Nanotube Interconnects: Cables and Wires |
106 |
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3.9 Outlook |
110 |
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References |
111 |
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4 Electrical Conductivity of Carbon Nanotubes: Modeling and Characterization |
113 |
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4.1 Introduction |
113 |
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4.2 Band Structure of Carbon Nanotubes and Energy Subbands |
114 |
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4.3 Electrical Conductivity of Isolated CNTs, from DC to THz Range |
116 |
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4.3.1 Transport Equation |
116 |
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4.3.2 Equivalent Parameters for an Isolated CNT |
121 |
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4.3.3 Plasmon Resonances in CNTs |
123 |
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4.4 Equivalent Resistivity for a CNT Bundle from DC to THz |
127 |
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4.4.1 A Bundle of CNTs Without Intershell Coupling |
127 |
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4.4.2 A Bundle of CNTs in Presence of Intershell Coupling |
130 |
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4.5 Electrical Conductivity of CNTs up to the Optical Range |
134 |
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4.6 Conclusions |
138 |
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References |
138 |
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5 Computational Studies of Thermal Transport Properties of Carbon Nanotube Materials |
141 |
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5.1 Introduction |
141 |
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5.2 Atomistic Modeling of Thermal Conductivity of Individual CNTs |
144 |
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5.3 Atomistic Modeling of Inter-Tube Contact Conductance |
149 |
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5.4 Mesoscopic Modeling of Thermal Transport in CNT Network Materials |
155 |
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5.5 Derivation of Scaling Laws and Monte Carlo Simulations |
161 |
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5.6 Concluding Remarks |
164 |
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References |
166 |
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Part II Applications |
174 |
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6 Overview of Carbon Nanotubes for Horizontal On-Chip Interconnects |
175 |
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6.1 Introduction |
175 |
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6.2 Brief Theoretical Reminder |
176 |
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6.3 CNT Density in Interconnections |
178 |
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6.4 CNT Integration in Horizontal Lines |
181 |
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6.5 CNT Contacts |
185 |
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6.5.1 End-Bonded Contacts |
186 |
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6.5.2 Side-Bonded Contacts |
188 |
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6.6 Performances of CNT Lines |
190 |
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6.7 Local Interconnects Made of Individual CNTs |
194 |
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6.8 CNT Doping |
199 |
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6.9 Conclusion |
199 |
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References |
200 |
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7 Carbon Nanotubes as Vertical Interconnects for 3D Integrated Circuits |
205 |
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7.1 Introduction |
205 |
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7.2 Requirements for CNT Integration |
208 |
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7.3 CNT for Vertical Interconnects |
209 |
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7.4 Carbon Nanotube TSV |
213 |
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7.5 Towards the Integration of CNT with Monolithic 3D IC |
215 |
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7.6 Conclusion and Future Prospects |
218 |
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References |
219 |
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8 Carbon Nanotubes as Microbumps for 3D Integration |
224 |
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8.1 Introduction |
224 |
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8.1.1 Level 0 of Interconnection Using CNTs |
225 |
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8.1.1.1 Local Interconnections Using CNTs [3] |
226 |
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8.1.1.2 Semi-Global Interconnections Using CNTs |
226 |
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8.1.1.3 Global Interconnections Using CNTs |
227 |
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8.1.1.4 Conclusion |
227 |
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8.1.2 Level 1 of Interconnection Using CNTs [4, 6–8] |
228 |
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8.1.2.1 Wire Bonding |
228 |
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8.1.2.2 Hot-Via [9–11] |
229 |
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8.1.2.3 Flip Chip |
229 |
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8.2 CNT-Based Microbumps |
231 |
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8.2.1 CNT Growth on Gold Metallization |
232 |
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8.2.1.1 Test Structure |
232 |
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8.2.1.2 Results and Discussion |
233 |
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8.2.2 RF Flip Chip Test Structure Based on CNT Bumps |
235 |
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8.2.2.1 Design and Fabrication |
235 |
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8.2.2.2 Fabrication Results |
241 |
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8.2.2.3 DC Measurements: CNT Bump Resistance and Reworkability |
243 |
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8.2.2.4 RF Measurements: Discussion |
245 |
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8.2.2.5 Hybrid (EM/Analytical) Modelling |
248 |
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8.3 Conclusion and Future Work |
250 |
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References |
251 |
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9 Electrothermal Modeling of Carbon Nanotube-Based TSVs |
255 |
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9.1 Introduction |
255 |
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9.2 Temperature-Dependent Thermal Conductivity and Specific Heat of CNTs |
257 |
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9.3 Electrical Properties of CNT-TSVs |
261 |
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9.4 Electrothermal Modeling of a Pair of CNT-TSVs |
267 |
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9.5 Crosstalk Effects in CNT-TSVs |
275 |
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9.6 3-D Carbon-Based Heterogeneous Interconnects |
278 |
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9.7 Conclusion |
286 |
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References |
287 |
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10 Exploring Carbon Nanotubes for 3D Power Delivery Networks |
290 |
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10.1 Introduction |
290 |
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10.2 Modeling of CNTs |
291 |
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10.3 CNTs for 2D Power Delivery Network |
294 |
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10.3.1 Branch Analysis with CNTs |
296 |
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10.4 CNTs for 3D Power Delivery Network |
300 |
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10.4.1 TSV CNT Analysis |
304 |
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10.4.2 Voltage Drop Analysis on a 3D PDN |
306 |
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10.5 Thermal Modeling for CNTs |
308 |
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10.6 Conclusion |
318 |
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References |
320 |
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11 Carbon Nanotubes for Monolithic 3D ICs |
322 |
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11.1 Introduction to Monolithic 3D Integration |
323 |
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11.1.1 Challenges for Monolithic 3D ICs |
324 |
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11.1.2 Enabling Monolithic 3D: CNTs and Emerging Nanotechnologies |
324 |
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11.2 CNFETs for Monolithic 3D ICs |
326 |
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11.2.1 CNTs as a Digital Logic Technology |
326 |
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11.2.2 Overcoming CNT Obstacles |
327 |
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11.2.3 Fabricating Monolithic 3D CNFET ICs |
330 |
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11.3 Experimental Demonstrations |
332 |
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11.3.1 Monolithic 3D CNFET ICs |
332 |
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11.3.2 Hybrid CNFET-Silicon CMOS Monolithic 3D ICs |
332 |
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11.3.3 Monolithic 3D Integration: Logic+Memory |
334 |
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11.4 Outlook: Ongoing and Future Work |
335 |
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References |
336 |
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